富采专利
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InGaN
地区 | 公告号 | 专利名称 |
|---|---|---|
US | 11600746 | Semiconductor device comprising electron blocking layers |
US | 11398583 | Light-emitting device |
US | 10971652 | Semiconductor device comprising electron blocking layers |
US | 10069037 | Light-emitting device and manufacturing method thereof |
US | 10714657 | Light-emitting device and manufacturing method thereof |
US | 11430934 | Light-emitting diode device |
US | 10784427 | Light-emitting diode device |
US | 10505092 | Light-emitting diode device |
US | 10707376 | Optoelectronic device |
US | 10910520 | Optoelectronic device |
US | 10475962 | Optoelectronic device |
US | 7821026 | Light emitting diode device and manufacturing method thereof |
US | 10038129 | Light emitting device |
US | 9893257 | Electrode structure of light emitting device |
US | 10522715 | Light-emitting device having a patterned surface |
US | 10181549 | Light-emitting device having a patterned surface |
US | 10505076 | Light-emitting device |
US | 10199542 | Light-emitting device |
US | 9530934 | Light-emitting device |
US | 7705344 | Light-emitting device |
US | 9425362 | Light emitting device |
US | 9705035 | Light emitting device |
US | 8963123 | Light emitting diode with enhanced light extraction |
US | 9257604 | Light-emitting device having a patterned surface |
US | 8492780 | Light-emitting device and manufacturing method thereof |
US | 8343788 | Light emitting device and manufacturing method thereof |
US | 9029890 | Light-emitting device having patterned substrate and method of manufacturing thereof |
US | 9293656 | Light emitting device |
US | 8343788 | Light emitting device and manufacturing method thereof |
US | 8474233 | Optoelectronic device and the manufacturing method thereof |
US | 8633501 | Light-emitting device having a patterned surface |
US | 8686462 | Optoelectronic device |
US | 9076946 | Light-emitting element |
US | 9153738 | Light-emitting element |
US | 9299893 | Light-emitting device that provides efficient and bright luminescence |
US | 9306123 | Light-emitting element |
US | 9337394 | Semiconductor light-emitting device |
US | 9362456 | Optoelectronic semiconductor device |
US | D782428S | Portion of light-emitting diode unit |
TW | I389351 | 高效率发光装置及其制造方法 |
TW | I591855 | 具有布拉格反射层位于窗户层之间之发光组件 |
TW | I590488 | 具有高效能反射结构之发光组件 |
TW | I597872 | 发光二极管组件 |
TW | D177985 | 发光二极管组件之部分 |
TW | D183626 | 发光二极管 |
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AlGaInP
地区 | 公告号 | 专利名称 |
|---|---|---|
US | 9490394 | Semiconductor light-emitting device |
US | 8274092 | Light-emitting device having a roughened surface with different topographies |
US | 7811838 | High efficiency light-emitting diode and method for manufacturing the same |
US | 7834369 | Light-emitting device having a roughened surface with different topographies |
US | 8207550 | Optoelectronic device and the manufacturing method thereof |
US | 8263998 | Light-emitting device |
US | 8343788 | Light emitting device and manufacturing method thereof |
US | 8530927 | Light-emitting device |
US | 8474233 | Optoelectronic device and the manufacturing method thereof |
US | 8541789 | Light-emitting device with patterned current diffusion layer |
US | 8546156 | High efficiency light-emitting diode and method for manufacturing the same |
US | 8643054 | Light-emitting device |
US | 8679874 | Light-emitting device having a roughened surface with different topographies |
US | 8692273 | Light-emitting device |
US | 8987776 | Light-emitting device |
US | 9006774 | Optoelectronic device and the manufacturing method thereof |
US | 9153747 | Light-emitting element |
US | 9385272 | Optoelectronic device and the manufacturing method thereof |
US | 9640728 | Optoelectronic device and the manufacturing method thereof |
US | 9660146 | Light-emitting element |
US | 11233171 | Semiconductor device |
US | 11239388 | Semiconductor device |
US | 11189754 | Semiconductor substrate |
US | 10121933 | Semiconductor device and the manufacturing method thereof |
US | 11374146 | Semiconductor device |
授权技术
▶
KSF 螢光粉
本网页旨在进行专利告示与虚拟专利标记，并符合相关之虚拟专利标记法规要求（包括但不限于美国专利法第 35 U.S.C. §287(a)）。
富采Ennostar之部分产品采用了授权自 Edison Innovations, LLC 之 K2SiF6:Mn4+ (PFS/KSF) 技术。
与该授权技术相关之专利信息，可至以下网址查询：https://www.dominionharbor.com/portfolio/edison/ennostar
前述网站由 Dominion Harbor 代表 Edison Innovations, LLC 管理与维护，并标示适用于该授权技术之专利。富采（Ennostar）并不控制该第三方网站之内容、维护或运作。
专利信息可能由 Edison Innovations, LLC 或其代表不定期进行更新。
最后更新日期：2026 年 7 月 22 日