Ennostar of Taiwan and ALLOS Semiconductors of Germany today announced a strategic alliance to jointly advance the mass production of 200 mm GaN-on-Si (Gallium Nitride on Silicon) LED epiwafers, accelerating the adoption of Micro LEDs in AR and other compact display applications. Combining Ennostar’s world-leading LED epitaxy manufacturing expertise with ALLOS’ industry-proven GaN-on-Si technologies, this collaboration marks an important milestone in the maturation of the global Micro LED supply chain.

By integrating Ennostar’s advanced LED layer structure technologies with ALLOS’ proprietary buffer layer and n-GaN layer innovations, the jointly developed GaN-on-Si LED epiwafers achieve brightness and efficiency comparable to conventional GaN-on-sapphire solutions. Expanding wafer size to 200 mm significantly increases output area per wafer and boosts process efficiency. In addition, the ultra-small pixel pitch of the wafers enables high-resolution near-eye displays, while ensuring high compatibility with silicon-based processes and scalable mass production feasibility.

“This partnership delivers competitive GaN-on-Si Micro LED solutions and provides a scalable production pathway compatible with standard silicon foundry processes,” said Dr. Terry Tang, President of Ennostar Corporation, part of Ennostar group. “By partnering with ALLOS, we can now address the 200 mm GaN-on-Si LED epiwafer segment alongside our existing market-leading Micro LED solutions, offering a uniquely comprehensive value proposition to the rapidly evolving Micro LED industry.”

“With Ennostar we work with the best possible partner to provide our customers with a high quality and scalable supply of epiwafers. Together we can offer the industry's best combination of highest LED efficiency and superior on-wafer and wafer-to-wafer yields for Micro LED chip manufacturing,” said Burkhard Slischka, co-founder and CEO of ALLOS.

Furthermore, this partnership lays the groundwork for future 300 mm GaN-on-Si LED epitaxy technology, addressing the market’s growing demand for larger wafer sizes and accelerating the path toward widespread Micro LED adoption. ALLOS has demonstrated 300 mm GaN-on-Si production capability since 2020 and continues to enhance its technology with global partners, while Ennostar remains committed to exploring new possibilities for Micro LED innovation.